By Moumita Mukherjee
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Additional resources for Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems
C. voltage was progressively applied on the Ni:ta-C heater (Fig. 10). Fig. 10. VO2’s two-terminal device transversal resistance versus the voltage applied on the Ni:ta-C heating resistance: heating phase (red), cooling phase (blue) One may easily noticed the great variation of the VO2’s resistivity (onset of the SMT) as the Ni:ta-C element dissipate the resistive heating. Work is in progress in order to simulate the heating transfer processes in the overall device, which will allow for optimum design in term of lowering the power consumption.
The electrical resistance/ resistivity of the VO2 thin films was recorded in the 20-100°C temperature range using a two-terminal device (two metallic contacts deposited nearby on a rectangular VO2 pattern). A typical resistance hysteresis cycle (heating- cooling loop) of a 200-nm thick VO2 thin films deposited on a C-type sapphire substrate can be observed in Fig. 4 (the VO2 pattern between the two measurements electrodes was, in this case, 70 m long x 45 m wide and 200 nm thick). One may observe a huge change in its resistance as the temperature is cycled through the phase transition (R~ 450 k at 20°C down to R· at 100°C).
10, typical signals from the Cu and Al body are shown. Fig. 10 shows the dependence of the time of existence of the plasma material with CDP on the size of microstructure grain of CSH material, which was obtained through processing of experimental data for the Cu body. While making the given dependence the data of three series of experiments were used, in which there were 10-15 experiments. The sizes of the CSH material were =7-10, 1525, 80-100 micron. Taking account that the size of the grain on the inner surface of CSH is equal to the size of the surface on the body, fig.
Advanced Microwave and Millimeter Wave Technologies: Semiconductor Devices, Circuits and Systems by Moumita Mukherjee