Advances in Microwaves - download pdf or read online

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By Leo Young (Eds.)

ISBN-10: 1483199452

ISBN-13: 9781483199450

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3 db was obtained when the converter was followed by an IF amplifier with a noise figure of 5 db. This system noise figure is significantly lower than could have been obtained with best crystal mixers. 5 db. A self-oscillating or "autodyne" converter with a gain of 1 db has been described by Sterzer et al. [58]. 5 db was measured [NFIF = 3 db]. , diodes for which L\r^C^>3). A severe drawback of these converters is that at high signal-power levels the self-öscillation frequency is pulled by the input signal, and the intermediate frequency is reduced.

TRANSISTORS A. INTRODUCTION The advent of planar epitaxial technology has established the transistor, in concert with varactor harmonic generators, as the principal solid state source FIG. 1. A modern overlay transistor structure. (Courtesy of C. R. Turner and F. ) of microwave power. Although other devices appear promising for the future, the proven reliability and well understood operation of transistor harmonic generator combinations make their choice a " natural " for present day systems. The precise dimensional control of planar technology allows the fabrication 46 B.

The maximum power output that can be generated by the junction of the amplifier diode is proportional to the maximum value of the diode peak current and the maximum value of the peak voltage across the diode junction. The maximum peak current is limited by stability considerations [see Eq. (25)] and can be written in terms of the voltage-gain-bandwidth product as follows: (/p)n TTGVBL (29) where a = / p (r j ) min . 27 (30) Equations (29) and (30) show that, for the same values of voltage-gain- TUNNEL DIODE DEVICES 27 bandwidth product and inductance, the maximum usable peak current is considerably greater for GaAs diodes than for either Ge or GaSb diodes.

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Advances in Microwaves by Leo Young (Eds.)

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